Diagnostics of plasma for metal-organic chemical vapour deposition of Cu and fabrication of Cu thin films using the plasma

Masaharu Shiratani, Hiroharu Kawasaki, Tsuyoshi Fukuzawa, Toshio Kinoshita, Yukio Watanabe

研究成果: Contribution to journalArticle査読

14 被引用数 (Scopus)

抄録

Effects of hydrogen dilution on properties of Cu films deposited using the metal-organic plasma chemical vapour deposition method were examined. On increasing the H2 dilution from 70 to 88%, the Cu concentration and gram size of the films increase from about 75 to 99% and from about 10 nm to above 100 nm respectively; also their resistivity decreases concomitantly to about 2 μΩ cm. Films of high quality are obtained in the high H2 dilution range above 80% H2, for which the emission intensity of H is high, suggesting that hydrogen atoms may play an important role in eliminating impurities from the films. The density of Cu atoms in the plasma measured by a light-absorption method is of the order of 109 cm-3, which is lower by two orders of magnitude than the density necessary to explain the deposition rate of 5 nm min-1 typical in our experiments.

本文言語英語
ページ(範囲)2754-2758
ページ数5
ジャーナルJournal of Physics D: Applied Physics
29
11
DOI
出版ステータス出版済み - 11 14 1996

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 音響学および超音波学
  • 表面、皮膜および薄膜

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