Diamond field-effect transistors with 1.3A/mm drain current density by Al 2O 3 passivation layer

Kazuyuki Hirama, Hisashi Sato, Yuichi Harada, Hideki Yamamoto, Makoto Kasu

研究成果: ジャーナルへの寄稿記事

70 引用 (Scopus)

抄録

Using nitrogen-dioxide (NO 2) adsorption treatment and Al 2O 3 passivation technique, we improved drain current (IDS) of hydrogen-terminated (Hterminated) diamond field-effect transistors (FETs). The Al 2O 3 passivation layer also serves as a gate-insulator in a gate region. Maximum IDS (I DSmax) of -1:35A/mm was obtained for the diamond FETs with NO 2 adsorption and the Al 2O 3 passivation layer. This I DSmax is the highest ever reported for diamond FETs and indicates that the Al 2O 3 passivation layer can stabilize adsorbed NO 2, which increases the hole carrier concentration on the H-terminated diamond surface. In RF small-signal characteristics, the diamond FETs with NO 2 adsorption and the Al 2O 3 passivation layer showed high cutoff-frequency (fT) and maximum frequency of oscillation (f max) in a wide gate-source voltage (VGS) range (>10 V). This is because the Al 2O 3 gate insulator with a high potential barrier against hole carriers can confine and control the high concentration of hole carriers and then high forward-bias voltage can be applied without noticeable gate leakage current.

元の言語英語
記事番号090112
ジャーナルJapanese journal of applied physics
51
発行部数9
DOI
出版物ステータス出版済み - 9 1 2012

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Drain current
Field effect transistors
Passivation
passivity
Diamonds
Current density
field effect transistors
diamonds
current density
Adsorption
adsorption
insulators
nitrogen dioxide
Cutoff frequency
electric potential
Bias voltage
Leakage currents
Carrier concentration
leakage
cut-off

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Diamond field-effect transistors with 1.3A/mm drain current density by Al 2O 3 passivation layer. / Hirama, Kazuyuki; Sato, Hisashi; Harada, Yuichi; Yamamoto, Hideki; Kasu, Makoto.

:: Japanese journal of applied physics, 巻 51, 番号 9, 090112, 01.09.2012.

研究成果: ジャーナルへの寄稿記事

Hirama, Kazuyuki ; Sato, Hisashi ; Harada, Yuichi ; Yamamoto, Hideki ; Kasu, Makoto. / Diamond field-effect transistors with 1.3A/mm drain current density by Al 2O 3 passivation layer. :: Japanese journal of applied physics. 2012 ; 巻 51, 番号 9.
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