TY - GEN
T1 - Diamond MOSFETs using 2D hole gas with 1700V breakdown voltage
AU - Kawarada, H.
AU - Yamada, T.
AU - Xu, D.
AU - Kitabayashi, Y.
AU - Shibata, M.
AU - Matsumura, D.
AU - Kobayashi, M.
AU - Saito, T.
AU - Kudo, T.
AU - Inaba, M.
AU - Hiraiwa, A.
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/7/25
Y1 - 2016/7/25
N2 - More than 1600V breakdown voltages have been obtained in hydrogen terminated (C-H) diamond planar p-channel MOSFETs with gate-drain distance of 16-22 μm. The drain current density exceeds 100mA/mm in the FETs. The blocking voltage and drain current characteristics are comparable to those of n-channel AlGaN/GaN FETs and planar SiC MOSFETs in a similar device size. Atomic layer deposited Al2O3 works as gate insulator and passivation layer. It also induces the 2 dimensional hole gas ubiquitously on C-H diamond surface not only in planar, but in a trench gate structure. The first diamond vertical MOSFET has also operated using the trench structure.
AB - More than 1600V breakdown voltages have been obtained in hydrogen terminated (C-H) diamond planar p-channel MOSFETs with gate-drain distance of 16-22 μm. The drain current density exceeds 100mA/mm in the FETs. The blocking voltage and drain current characteristics are comparable to those of n-channel AlGaN/GaN FETs and planar SiC MOSFETs in a similar device size. Atomic layer deposited Al2O3 works as gate insulator and passivation layer. It also induces the 2 dimensional hole gas ubiquitously on C-H diamond surface not only in planar, but in a trench gate structure. The first diamond vertical MOSFET has also operated using the trench structure.
UR - http://www.scopus.com/inward/record.url?scp=84982181870&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84982181870&partnerID=8YFLogxK
U2 - 10.1109/ISPSD.2016.7520883
DO - 10.1109/ISPSD.2016.7520883
M3 - Conference contribution
AN - SCOPUS:84982181870
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 483
EP - 486
BT - Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
Y2 - 12 June 2016 through 16 June 2016
ER -