@inproceedings{0bef415e91aa41efaa960e449ab59153,
title = "Diamond MOSFETs using 2D hole gas with 1700V breakdown voltage",
abstract = "More than 1600V breakdown voltages have been obtained in hydrogen terminated (C-H) diamond planar p-channel MOSFETs with gate-drain distance of 16-22 μm. The drain current density exceeds 100mA/mm in the FETs. The blocking voltage and drain current characteristics are comparable to those of n-channel AlGaN/GaN FETs and planar SiC MOSFETs in a similar device size. Atomic layer deposited Al2O3 works as gate insulator and passivation layer. It also induces the 2 dimensional hole gas ubiquitously on C-H diamond surface not only in planar, but in a trench gate structure. The first diamond vertical MOSFET has also operated using the trench structure.",
author = "H. Kawarada and T. Yamada and D. Xu and Y. Kitabayashi and M. Shibata and D. Matsumura and M. Kobayashi and T. Saito and T. Kudo and M. Inaba and A. Hiraiwa",
year = "2016",
month = jul,
day = "25",
doi = "10.1109/ISPSD.2016.7520883",
language = "English",
series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "483--486",
booktitle = "Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016",
address = "United States",
note = "28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 ; Conference date: 12-06-2016 Through 16-06-2016",
}