Diamond nucleation enhancement on Si by controlling ion-bombardment energy in electron cyclotron resonance plasma

Yutaka Kouzuma, Kungen Teii, Kiichiro Uchino, Katsunori Muraoka

研究成果: Contribution to journalArticle査読

3 被引用数 (Scopus)

抄録

A nucleation enhancement technique with defined ion-bombardment energies has been developed for diamond deposition on mirror-polished Si wafers. The substrate was negatively biased at several tens of volts in an electron cyclotron resonance methane-hydrogen plasma at 0.13 Pa. The nucleation density was significantly increased to ∼108 nuclei/cm2 for the bias voltage range of -20 to -50 V. The highest density was obtained with a mean ion energy of around 50 eV. The mechanism of nucleation enhancement was correlated with the formation of sp3 bonds as nucleation sites by energetic ion bombardment.

本文言語英語
ページ(範囲)5749-5750
ページ数2
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
41
9
DOI
出版ステータス出版済み - 9 2002

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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