A nucleation enhancement technique with defined ion-bombardment energies has been developed for diamond deposition on mirror-polished Si wafers. The substrate was negatively biased at several tens of volts in an electron cyclotron resonance methane-hydrogen plasma at 0.13 Pa. The nucleation density was significantly increased to ∼108 nuclei/cm2 for the bias voltage range of -20 to -50 V. The highest density was obtained with a mean ion energy of around 50 eV. The mechanism of nucleation enhancement was correlated with the formation of sp3 bonds as nucleation sites by energetic ion bombardment.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||出版済み - 9 2002|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)