抄録
We developed dielectrophoresis (DEP)-based fabrication method of a carbon nanotube (CNT) NO2 gas sensor that integrates CNT on a microelectrode. The dielectrophoretic integration method can also be used to deposit nanoparticles on CNT surface. This study demonstrates that the modification of the CNT with zinc oxide nanoparticles (ZnO NPs) by dielectrophoresis This sensor were tested by measuring resistance change of the sensor against 1ppm concentration of NO2 at room temperature. The resistance of 0.025 mg/ml and 1.25 mg/ml ZnO NPs-decorated CNT gas sensor rapidly increased followed by slow decreased. This rapid resistance change was saturated by deposition of 25 mg/ml ZnO NPs, and behaved similar to ZnO NW gas sensor. The resistance decrease can be considered as CNT response. The rapid resistance increase cannot be explained by simply summing the responses of the SWCNT sensor and ZnO sensor. The depletion layer of pn-junction due to connection of the CNT and ZnO can be concerned.
元の言語 | 英語 |
---|---|
ホスト出版物のタイトル | Proceedings of the 2016 IEEE Region 10 Conference, TENCON 2016 |
出版者 | Institute of Electrical and Electronics Engineers Inc. |
ページ | 3054-3057 |
ページ数 | 4 |
ISBN(電子版) | 9781509025961 |
DOI | |
出版物ステータス | 出版済み - 2 8 2017 |
イベント | 2016 IEEE Region 10 Conference, TENCON 2016 - Singapore, シンガポール 継続期間: 11 22 2016 → 11 25 2016 |
その他
その他 | 2016 IEEE Region 10 Conference, TENCON 2016 |
---|---|
国 | シンガポール |
市 | Singapore |
期間 | 11/22/16 → 11/25/16 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Computer Science Applications
- Electrical and Electronic Engineering
これを引用
Dielectrophoretic modification of carbon nanotube with ZnO nanoparticles for NO2 gas sensing. / Inoue, Shota; Nanba, Yushi; Nakano, Michihiko; Suehiro, Junya.
Proceedings of the 2016 IEEE Region 10 Conference, TENCON 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 3054-3057 7848608.研究成果: 著書/レポートタイプへの貢献 › 会議での発言
}
TY - GEN
T1 - Dielectrophoretic modification of carbon nanotube with ZnO nanoparticles for NO2 gas sensing
AU - Inoue, Shota
AU - Nanba, Yushi
AU - Nakano, Michihiko
AU - Suehiro, Junya
PY - 2017/2/8
Y1 - 2017/2/8
N2 - We developed dielectrophoresis (DEP)-based fabrication method of a carbon nanotube (CNT) NO2 gas sensor that integrates CNT on a microelectrode. The dielectrophoretic integration method can also be used to deposit nanoparticles on CNT surface. This study demonstrates that the modification of the CNT with zinc oxide nanoparticles (ZnO NPs) by dielectrophoresis This sensor were tested by measuring resistance change of the sensor against 1ppm concentration of NO2 at room temperature. The resistance of 0.025 mg/ml and 1.25 mg/ml ZnO NPs-decorated CNT gas sensor rapidly increased followed by slow decreased. This rapid resistance change was saturated by deposition of 25 mg/ml ZnO NPs, and behaved similar to ZnO NW gas sensor. The resistance decrease can be considered as CNT response. The rapid resistance increase cannot be explained by simply summing the responses of the SWCNT sensor and ZnO sensor. The depletion layer of pn-junction due to connection of the CNT and ZnO can be concerned.
AB - We developed dielectrophoresis (DEP)-based fabrication method of a carbon nanotube (CNT) NO2 gas sensor that integrates CNT on a microelectrode. The dielectrophoretic integration method can also be used to deposit nanoparticles on CNT surface. This study demonstrates that the modification of the CNT with zinc oxide nanoparticles (ZnO NPs) by dielectrophoresis This sensor were tested by measuring resistance change of the sensor against 1ppm concentration of NO2 at room temperature. The resistance of 0.025 mg/ml and 1.25 mg/ml ZnO NPs-decorated CNT gas sensor rapidly increased followed by slow decreased. This rapid resistance change was saturated by deposition of 25 mg/ml ZnO NPs, and behaved similar to ZnO NW gas sensor. The resistance decrease can be considered as CNT response. The rapid resistance increase cannot be explained by simply summing the responses of the SWCNT sensor and ZnO sensor. The depletion layer of pn-junction due to connection of the CNT and ZnO can be concerned.
UR - http://www.scopus.com/inward/record.url?scp=85015398402&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85015398402&partnerID=8YFLogxK
U2 - 10.1109/TENCON.2016.7848608
DO - 10.1109/TENCON.2016.7848608
M3 - Conference contribution
AN - SCOPUS:85015398402
SP - 3054
EP - 3057
BT - Proceedings of the 2016 IEEE Region 10 Conference, TENCON 2016
PB - Institute of Electrical and Electronics Engineers Inc.
ER -