Diffuse X-ray scattering study of sublattice ordering among group III atoms in In0.5Ga0.5P and In0.5Al0.5P

S. Yasuami, K. Koga, K. Ohshima, S. Sasaki, M. Ando

研究成果: Contribution to journalArticle査読

7 被引用数 (Scopus)

抄録

The intensity of superstructure reflections and associated diffuse scattering from In0.5Ga0.5P and In0.5Al0.5P epitaxic layers grown on (001) GaAs substrates was mapped in reciprocal space. The Warren-Cowley short-range-order parameters were obtained through the usual process for evaluating Fourier coefficients. Varying values for the correlation length in different directions indicate how group III atoms stack up in ordered states. The resultant structure with long-range order confirms the hypothesis made on the basis of electron diffraction and high-resolution transmission electron microscopy studies.

本文言語英語
ページ(範囲)514-518
ページ数5
ジャーナルJournal of Applied Crystallography
25
pt 4
DOI
出版ステータス出版済み - 8 1 1992

All Science Journal Classification (ASJC) codes

  • 生化学、遺伝学、分子生物学(全般)

フィンガープリント

「Diffuse X-ray scattering study of sublattice ordering among group III atoms in In<sub>0.5</sub>Ga<sub>0.5</sub>P and In<sub>0.5</sub>Al<sub>0.5</sub>P」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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