Diffusion and electrical properties of 3d transition-metal impurity series in silicon

Hiroshi Nakashima, Taizoh Sadoh, H. Kitagawa, K. Hashimoto

研究成果: Contribution to journalConference article査読

42 被引用数 (Scopus)

抄録

Diffusion and electrical properties from Ti to Ni in Si have been comprehensively investigated by deep level transient spectroscopy (DLTS) and the Hall effect. Electrically active components from Ti to Fe are assigned to be interstitial species, and DLTS results reveal double donors and an acceptor except for Cr and Fe which exhibit only one donor state. For Cr, Mn, and Fe, pairs of the donors with B, acting as donors, are also detected by DLTS. Diffusivities D of these elements are determined in the wide temperature range from room temperature to high temperature. The results show a clear trend that D increases with increasing atomic numbers. By contrast, electrically active components of Co and Ni are assigned to be substitutional species. These active components, only a small fraction of total Co or Ni, have an amphoteric nature in n- and p-type Si. We present the chemical trends of the diffusion and electrical properties with a comparative manner.

本文言語英語
ページ(範囲)761-766
ページ数6
ジャーナルMaterials Science Forum
143-4
pt 2
出版ステータス出版済み - 12 1 1994
イベントProceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria
継続期間: 7 18 19937 23 1993

All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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