Diffusion and trapping of tritium in vanadium alloys

J. Masuda, K. Hashizume, T. Otsuka, T. Tanabe, Y. Hatano, Y. Nakamura, T. Nagasaka, T. Muroga

    研究成果: Contribution to journalArticle査読

    12 被引用数 (Scopus)

    抄録

    Tritium diffusion in a vanadium alloy (V-4Cr-4Ti) has been investigated at temperatures ranging from 230 K to 573 K. Tritium was loaded into the surface layers of the alloy specimen with an ac-glow discharge. Before and after diffusion annealing of the specimen, tritium diffusion profiles were measured by means of an imaging plate (IP) technique. Tritium diffusion coefficients (DT), which were evaluated by fitting a numerical solution of the diffusion geometry employed here to the obtained diffusion profiles, were a little smaller than those for pure V with the activation energy of 0.13 ± 0.01 eV. Below 320 K, in addition, the Arrhenius plot of DT bent downwards showing a larger activation energy of 0.19 ± 0.01 eV, probably owing to the trapping effect of both of Cr and Ti. The effect of alloying elements on tritium diffusion and the influence of tritium release from the surface were discussed.

    本文言語英語
    ページ(範囲)1256-1260
    ページ数5
    ジャーナルJournal of Nuclear Materials
    363-365
    1-3
    DOI
    出版ステータス出版済み - 6 15 2007

    All Science Journal Classification (ASJC) codes

    • 核物理学および高エネルギー物理学
    • 材料科学(全般)
    • 原子力エネルギーおよび原子力工学

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