Diffusion coefficient of iron in silicon at room temperature

Hiroshi Nakashima, Takashi Isobe, Yuhide Yamamoto, Kimio Hashimoto

    研究成果: Contribution to journalArticle査読

    43 被引用数 (Scopus)

    抄録

    The pairing reaction of interstitial iron and substitutional boron for samples diffused with iron into boron-doped p-type silicon was studied by measuring the concentration of interstitial iron by DLTS as a function of the storage time at the temperatures of 0, 27, 42, 57 and 72°C. The diffusion coefficient of interstitial iron in silicon was determined at the temperature range between 0 and 72°C. The diffusion coefficient was represented by the expression DFe=3.3×10-1 exp(-0.81/kT)cm2s-1.

    本文言語英語
    ページ(範囲)1542-1543
    ページ数2
    ジャーナルJapanese Journal of Applied Physics
    27
    8 R
    DOI
    出版ステータス出版済み - 8 1988

    All Science Journal Classification (ASJC) codes

    • 工学(全般)
    • 物理学および天文学(全般)

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