Diffusion equation-based study of thin film semiconductor gas sensor-response transient

Naoki Matsunaga, Go Sakai, Kengo Shimanoe, Noboru Yamazoe

研究成果: ジャーナルへの寄稿Conference article

77 引用 (Scopus)

抄録

A diffusion-reaction equation has been formulated and solved under non-steady condition in order to simulate how the gas concentration profile develops inside a thin film of semiconducting oxide after its exposure to a target gas. The gas concentration can be expressed by a polynomial function involving diffusion coefficient (D), rate constant (k), film thickness (L), depth from the film surface (x), time (t) and target gas concentration outside (Cs). Remarkably, the gas concentration at a given x exhibits overshooting behavior before reaching a steady value, the magnitude and appearance time of the overshooting being very dependent on x, k and L/D1/2. The overshooting appears as a result of the competition between diffusion and reaction. Two types of overshooting are recognized, which are ascribable to the gas molecules having entered from the surface and to those having reflected by the wall of substrate, respectively. Reflecting such an overshooting in gas concentration, the response transient also exhibits an overshooting phenomenon.

元の言語英語
ページ(範囲)216-221
ページ数6
ジャーナルSensors and Actuators, B: Chemical
83
発行部数1-3
DOI
出版物ステータス出版済み - 3 15 2002
イベントSelected papers from Transduckers '01 Eurosensors XV (Transduckers 2001) - Munich, ドイツ
継続期間: 6 10 20016 14 2001

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transient response
Chemical sensors
Transient analysis
Gases
Semiconductor materials
Thin films
sensors
thin films
gases
reaction-diffusion equations
Oxides
Film thickness
Rate constants
polynomials
film thickness
diffusion coefficient
Polynomials
Molecules
oxides
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

これを引用

Diffusion equation-based study of thin film semiconductor gas sensor-response transient. / Matsunaga, Naoki; Sakai, Go; Shimanoe, Kengo; Yamazoe, Noboru.

:: Sensors and Actuators, B: Chemical, 巻 83, 番号 1-3, 15.03.2002, p. 216-221.

研究成果: ジャーナルへの寄稿Conference article

Matsunaga, Naoki ; Sakai, Go ; Shimanoe, Kengo ; Yamazoe, Noboru. / Diffusion equation-based study of thin film semiconductor gas sensor-response transient. :: Sensors and Actuators, B: Chemical. 2002 ; 巻 83, 番号 1-3. pp. 216-221.
@article{fe45e6f1c1374200a5d14270c5d00d9f,
title = "Diffusion equation-based study of thin film semiconductor gas sensor-response transient",
abstract = "A diffusion-reaction equation has been formulated and solved under non-steady condition in order to simulate how the gas concentration profile develops inside a thin film of semiconducting oxide after its exposure to a target gas. The gas concentration can be expressed by a polynomial function involving diffusion coefficient (D), rate constant (k), film thickness (L), depth from the film surface (x), time (t) and target gas concentration outside (Cs). Remarkably, the gas concentration at a given x exhibits overshooting behavior before reaching a steady value, the magnitude and appearance time of the overshooting being very dependent on x, k and L/D1/2. The overshooting appears as a result of the competition between diffusion and reaction. Two types of overshooting are recognized, which are ascribable to the gas molecules having entered from the surface and to those having reflected by the wall of substrate, respectively. Reflecting such an overshooting in gas concentration, the response transient also exhibits an overshooting phenomenon.",
author = "Naoki Matsunaga and Go Sakai and Kengo Shimanoe and Noboru Yamazoe",
year = "2002",
month = "3",
day = "15",
doi = "10.1016/S0925-4005(01)01043-7",
language = "English",
volume = "83",
pages = "216--221",
journal = "Sensors and Actuators, B: Chemical",
issn = "0925-4005",
publisher = "Elsevier",
number = "1-3",

}

TY - JOUR

T1 - Diffusion equation-based study of thin film semiconductor gas sensor-response transient

AU - Matsunaga, Naoki

AU - Sakai, Go

AU - Shimanoe, Kengo

AU - Yamazoe, Noboru

PY - 2002/3/15

Y1 - 2002/3/15

N2 - A diffusion-reaction equation has been formulated and solved under non-steady condition in order to simulate how the gas concentration profile develops inside a thin film of semiconducting oxide after its exposure to a target gas. The gas concentration can be expressed by a polynomial function involving diffusion coefficient (D), rate constant (k), film thickness (L), depth from the film surface (x), time (t) and target gas concentration outside (Cs). Remarkably, the gas concentration at a given x exhibits overshooting behavior before reaching a steady value, the magnitude and appearance time of the overshooting being very dependent on x, k and L/D1/2. The overshooting appears as a result of the competition between diffusion and reaction. Two types of overshooting are recognized, which are ascribable to the gas molecules having entered from the surface and to those having reflected by the wall of substrate, respectively. Reflecting such an overshooting in gas concentration, the response transient also exhibits an overshooting phenomenon.

AB - A diffusion-reaction equation has been formulated and solved under non-steady condition in order to simulate how the gas concentration profile develops inside a thin film of semiconducting oxide after its exposure to a target gas. The gas concentration can be expressed by a polynomial function involving diffusion coefficient (D), rate constant (k), film thickness (L), depth from the film surface (x), time (t) and target gas concentration outside (Cs). Remarkably, the gas concentration at a given x exhibits overshooting behavior before reaching a steady value, the magnitude and appearance time of the overshooting being very dependent on x, k and L/D1/2. The overshooting appears as a result of the competition between diffusion and reaction. Two types of overshooting are recognized, which are ascribable to the gas molecules having entered from the surface and to those having reflected by the wall of substrate, respectively. Reflecting such an overshooting in gas concentration, the response transient also exhibits an overshooting phenomenon.

UR - http://www.scopus.com/inward/record.url?scp=0037086394&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037086394&partnerID=8YFLogxK

U2 - 10.1016/S0925-4005(01)01043-7

DO - 10.1016/S0925-4005(01)01043-7

M3 - Conference article

AN - SCOPUS:0037086394

VL - 83

SP - 216

EP - 221

JO - Sensors and Actuators, B: Chemical

JF - Sensors and Actuators, B: Chemical

SN - 0925-4005

IS - 1-3

ER -