Diffusion of electrically-active cobalt in silicon

Kouji Hashimoto; Hiroshi Nakashima; Kimio Hashimoto

doi:10.1143/JJAP.27.1776

Diffusion of electrically-active cobalt in silicon

Kouji Hashimoto, Hiroshi Nakashima, Kimio Hashimoto

研究成果: Contribution to journal › Article › 査読

5 被引用数 (Scopus)

抄録

The annealing of supersaturated cobalt in silicon was studied by measuring the cobalt concentration as a function of the annealing time. The diffusion of electrically-active cobalt in silicon is governed by the interstitial cobalt concentration.

本文言語	英語
ページ（範囲）	1776-1777
ページ数	2
ジャーナル	Japanese Journal of Applied Physics
巻	27
号	9 R
DOI	https://doi.org/10.1143/JJAP.27.1776
出版ステータス	出版済み - 9 1988

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

文献へのアクセス

10.1143/JJAP.27.1776

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引用スタイル

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title = "Diffusion of electrically-active cobalt in silicon",

abstract = "The annealing of supersaturated cobalt in silicon was studied by measuring the cobalt concentration as a function of the annealing time. The diffusion of electrically-active cobalt in silicon is governed by the interstitial cobalt concentration.",

author = "Kouji Hashimoto and Hiroshi Nakashima and Kimio Hashimoto",

year = "1988",

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