Diffusion of electrically-active cobalt in silicon

Kouji Hashimoto, Hiroshi Nakashima, Kimio Hashimoto

    研究成果: ジャーナルへの寄稿記事

    5 引用 (Scopus)

    抄録

    The annealing of supersaturated cobalt in silicon was studied by measuring the cobalt concentration as a function of the annealing time. The diffusion of electrically-active cobalt in silicon is governed by the interstitial cobalt concentration.

    元の言語英語
    ページ(範囲)1776-1777
    ページ数2
    ジャーナルJapanese Journal of Applied Physics
    27
    発行部数9 R
    DOI
    出版物ステータス出版済み - 9 1988

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    Cobalt
    cobalt
    Silicon
    silicon
    Annealing
    annealing
    interstitials

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

    これを引用

    Diffusion of electrically-active cobalt in silicon. / Hashimoto, Kouji; Nakashima, Hiroshi; Hashimoto, Kimio.

    :: Japanese Journal of Applied Physics, 巻 27, 番号 9 R, 09.1988, p. 1776-1777.

    研究成果: ジャーナルへの寄稿記事

    Hashimoto, Kouji ; Nakashima, Hiroshi ; Hashimoto, Kimio. / Diffusion of electrically-active cobalt in silicon. :: Japanese Journal of Applied Physics. 1988 ; 巻 27, 番号 9 R. pp. 1776-1777.
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    abstract = "The annealing of supersaturated cobalt in silicon was studied by measuring the cobalt concentration as a function of the annealing time. The diffusion of electrically-active cobalt in silicon is governed by the interstitial cobalt concentration.",
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