抄録
The annealing of supersaturated cobalt in silicon was studied by measuring the cobalt concentration as a function of the annealing time. The diffusion of electrically-active cobalt in silicon is governed by the interstitial cobalt concentration.
本文言語 | 英語 |
---|---|
ページ(範囲) | 1776-1777 |
ページ数 | 2 |
ジャーナル | Japanese Journal of Applied Physics |
巻 | 27 |
号 | 9 R |
DOI | |
出版ステータス | 出版済み - 9月 1988 |
!!!All Science Journal Classification (ASJC) codes
- 工学(全般)
- 物理学および天文学(全般)