Diffusion of electrically-active cobalt in silicon

Kouji Hashimoto; Hiroshi Nakashima; Kimio Hashimoto

doi:10.1143/JJAP.27.1776

Diffusion of electrically-active cobalt in silicon

Kouji Hashimoto, Hiroshi Nakashima, Kimio Hashimoto

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

5 被引用数 (Scopus)

抄録

The annealing of supersaturated cobalt in silicon was studied by measuring the cobalt concentration as a function of the annealing time. The diffusion of electrically-active cobalt in silicon is governed by the interstitial cobalt concentration.

本文言語	英語
ページ（範囲）	1776-1777
ページ数	2
ジャーナル	Japanese Journal of Applied Physics
巻	27
号	9 R
DOI	https://doi.org/10.1143/JJAP.27.1776
出版ステータス	出版済み - 9月 1988

!!!All Science Journal Classification (ASJC) codes

工学（全般）
物理学および天文学（全般）

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10.1143/JJAP.27.1776

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title = "Diffusion of electrically-active cobalt in silicon",

abstract = "The annealing of supersaturated cobalt in silicon was studied by measuring the cobalt concentration as a function of the annealing time. The diffusion of electrically-active cobalt in silicon is governed by the interstitial cobalt concentration.",

author = "Kouji Hashimoto and Hiroshi Nakashima and Kimio Hashimoto",

year = "1988",

month = sep,

doi = "10.1143/JJAP.27.1776",

language = "English",

volume = "27",

pages = "1776--1777",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

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T1 - Diffusion of electrically-active cobalt in silicon

AU - Hashimoto, Kouji

AU - Nakashima, Hiroshi

AU - Hashimoto, Kimio

PY - 1988/9

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N2 - The annealing of supersaturated cobalt in silicon was studied by measuring the cobalt concentration as a function of the annealing time. The diffusion of electrically-active cobalt in silicon is governed by the interstitial cobalt concentration.

AB - The annealing of supersaturated cobalt in silicon was studied by measuring the cobalt concentration as a function of the annealing time. The diffusion of electrically-active cobalt in silicon is governed by the interstitial cobalt concentration.

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U2 - 10.1143/JJAP.27.1776

DO - 10.1143/JJAP.27.1776

M3 - Article

AN - SCOPUS:0024070201

VL - 27

SP - 1776

EP - 1777

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 9 R

ER -

Diffusion of electrically-active cobalt in silicon

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!!!All Science Journal Classification (ASJC) codes

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