Tritium diffusion behavior in a V-4Cr-4Ti (NIFS-Heat-2) alloy has been examined with a tritium tracer technique. Firstly, a small amount of tritium (T) was implanted into the specimen surface, and then the specimen was diffusion-annealed at temperatures ranging from 373 K to 573 K. The diffusion depth profile of T in the specimen was measured with a tritium imaging plate (IP) technique to determine the diffusion coefficient. The obtained diffusion coefficient of tritium in V-4Cr-4Ti is expressed asDt (cm2 / s) = (7.5 ± 0.2) × 10- 4 exp (- 0.13 (eV) / kT),which is lower than that in pure vanadium, and is comparable with literature values of protium in a V-4Ti alloy taking the isotope mass effect into consideration.
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics
- Materials Science(all)
- Nuclear Energy and Engineering