Dilute moment n-type ferromagnetic semiconductor Li(Zn,Mn)As

J. Mašek, J. Kudrnovský, F. MácA, B. L. Gallagher, R. P. Campion, D. H. Gregory, T. Jungwirth

研究成果: ジャーナルへの寄稿学術誌査読

82 被引用数 (Scopus)

抄録

We propose to replace Ga in (Ga,Mn)As with Li and Zn as a route to high Curie temperature, carrier mediated ferromagnetism in a dilute moment n-type semiconductor. Superior material characteristics, rendering Li(Zn,Mn)As a realistic candidate for such a system, include high solubility of the isovalent substitutional Mn impurity and carrier concentration controlled independently of Mn doping by adjusting Li-(Zn,Mn) stoichiometry. Our predictions are anchored by ab initio calculations and comparisons with the familiar and directly related (Ga,Mn)As, by the physical picture we provide for the exchange interaction between Mn local moments and electrons in the conduction band, and by analysis of prospects for the controlled growth of Li(Zn,Mn)As materials.

本文言語英語
論文番号067202
ジャーナルPhysical review letters
98
6
DOI
出版ステータス出版済み - 2月 7 2007
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 物理学および天文学(全般)

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