TY - JOUR
T1 - Dilute moment n-type ferromagnetic semiconductor Li(Zn,Mn)As
AU - Mašek, J.
AU - Kudrnovský, J.
AU - MácA, F.
AU - Gallagher, B. L.
AU - Campion, R. P.
AU - Gregory, D. H.
AU - Jungwirth, T.
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2007/2/7
Y1 - 2007/2/7
N2 - We propose to replace Ga in (Ga,Mn)As with Li and Zn as a route to high Curie temperature, carrier mediated ferromagnetism in a dilute moment n-type semiconductor. Superior material characteristics, rendering Li(Zn,Mn)As a realistic candidate for such a system, include high solubility of the isovalent substitutional Mn impurity and carrier concentration controlled independently of Mn doping by adjusting Li-(Zn,Mn) stoichiometry. Our predictions are anchored by ab initio calculations and comparisons with the familiar and directly related (Ga,Mn)As, by the physical picture we provide for the exchange interaction between Mn local moments and electrons in the conduction band, and by analysis of prospects for the controlled growth of Li(Zn,Mn)As materials.
AB - We propose to replace Ga in (Ga,Mn)As with Li and Zn as a route to high Curie temperature, carrier mediated ferromagnetism in a dilute moment n-type semiconductor. Superior material characteristics, rendering Li(Zn,Mn)As a realistic candidate for such a system, include high solubility of the isovalent substitutional Mn impurity and carrier concentration controlled independently of Mn doping by adjusting Li-(Zn,Mn) stoichiometry. Our predictions are anchored by ab initio calculations and comparisons with the familiar and directly related (Ga,Mn)As, by the physical picture we provide for the exchange interaction between Mn local moments and electrons in the conduction band, and by analysis of prospects for the controlled growth of Li(Zn,Mn)As materials.
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U2 - 10.1103/PhysRevLett.98.067202
DO - 10.1103/PhysRevLett.98.067202
M3 - Article
AN - SCOPUS:33846890640
VL - 98
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 6
M1 - 067202
ER -