Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric metal/germanium/metal structure

Dong Wang, Sho Kamezawa, Keisuke Yamamoto, Hiroshi Nakashima

    研究成果: Chapter in Book/Report/Conference proceedingConference contribution

    抄録

    As a promising material for fabricating on-chip optoelectronic devices, germanium (Ge) has a direct band gap of 0.8 eV, which matches with the wavelength for optical communication. The energy difference is only 134 meV between direct and indirect band gaps, implying the possibility of a direct band gap light emission. In general, a p-i-n diode structure is used for a Ge photo emitter, of which fabrication process is relatively complicated and high-quality n-type doping is still an issue. Recently we achieved high Schottky barrier heights for electrons ΦBN = 0.60 eV (HfGe/n-Ge) and holes ΦBP = 0.57 eV (TiN/p-Ge) [1,2]. Based on this technology, we demonstrate direct band gap room temperature electroluminescence (EL) from bulk Ge using a fin-type asymmetric metel/Ge/metal (HfGe/Ge/TiN) structure.

    本文言語英語
    ホスト出版物のタイトル2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
    出版社IEEE Computer Society
    ページ109-110
    ページ数2
    ISBN(印刷版)9781479954285
    DOI
    出版ステータス出版済み - 2014
    イベント7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 - Singapore, シンガポール
    継続期間: 6 2 20146 4 2014

    出版物シリーズ

    名前2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

    その他

    その他7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
    国/地域シンガポール
    CitySingapore
    Period6/2/146/4/14

    All Science Journal Classification (ASJC) codes

    • 電子工学および電気工学

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