Direct bonding of LiNbO3 and SiC wafers at room temperature

Ryo Takigawa, Jun Utsumi

研究成果: Contribution to journalArticle

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Application of the surface activated bonding (SAB) method to direct bonding of LiNbO3 and SiC was investigated. SAB using argon fast atom beam bombardment resulted in the successful formation of a room-temperature bonded LiNbO3/SiC wafer for the first time. Cross-sectional transmission electron microscopy (TEM) observations showed a void-free bonded interface at the atomic level. The bonded interface had an amorphous-like layer that was a few nanometers thick, which was considered to be formed during the bombardment process. The resulting LiNbO3/SiC structure can be utilized to realize a new configuration of various devices including surface acoustic wave filters for use in high-power applications that can satisfy both temperature compensation and heat dissipation requirements.

元の言語英語
ページ(範囲)58-61
ページ数4
ジャーナルScripta Materialia
174
DOI
出版物ステータス出版済み - 1 1 2020

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys

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