Direct crystallization and characterization of Bi3TiTaO 9 thin films prepared by metalorganic chemical vapor deposition

Muneyasu Suzuki, Hajime Nagata, Norimasa Nukaga, Takayuki Watanabe, Hiroshi Funakubo, Tadashi Takenaka

研究成果: ジャーナルへの寄稿記事

1 引用 (Scopus)

抜粋

Bi3TiTaO9 (BTT) thin films were prepared on (111)Pt/Ti/SiO2/Si substrate by electron cyclotron resonance plasma-enhanced metalorganic chemical vapor deposition (ECR-MOCVD). BTT thin films deposited at 550°C were found to consist of a single phase of bismuth layer structure by X-ray diffraction (XRD). This temperature was lower than that reported in the data for obtaining single phase SrBi2Ta 2O9 (SBT) thin films prepared by MOCVD. Furthermore, the reciprocal space mapping of BTT thin films showed the (103)-preferred orientation of this film, as well as the orientation of SBT thin films. The dielectric constant, er, and loss tangent, tan δ, of the BTT thin film were 180 and 3% at 1 MHz, respectively. An abrupt increase of the leakage current of this film was observed at about 280kV/cm.

元の言語英語
ページ(範囲)6825-6828
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
41
発行部数11 B
DOI
出版物ステータス出版済み - 11 1 2002
外部発表Yes

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用