Direct epitaxial growth of semiconducting β-FeSi2 thin films on Si(111) by facing targets direct-current sputtering

T. Yoshitake, Y. Inokuchi, A. Yuri, K. Nagayama

    研究成果: Contribution to journalArticle査読

    44 被引用数 (Scopus)

    抄録

    Semiconducting Β-Fe Si2 thin films were epitaxially as-grown on Si(111) substrates at a substrate temperature of 600 °C, which is at least 200 °C lower than ordinary annealing temperatures, by using the facing targets direct-current sputtering (FTDCS) method using an Fe Si2 target without annealing. The deposited film exhibits a smooth surface with a surface roughness root mean square of 1.47 nm. The direct and indirect optical band gaps estimated from the experiment were in agreement with those of the single crystalline bulk. Temperature dependence of the electrical conductivity implied Co incorporation from the Fe Si2 targets with a purity of 3N. The FTDCS method, in which a substrate is free of plasma and energetic neutral atoms diffused into the substrate owing to low Ar pressure sputtering, is effective for the direct epitaxial growth of Β-Fe Si2 thin films with smooth surfaces.

    本文言語英語
    論文番号182104
    ジャーナルApplied Physics Letters
    88
    18
    DOI
    出版ステータス出版済み - 5 1 2006

    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy (miscellaneous)

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