Direct growth of bent carbon nanotubes on surface engineered sapphire

Hiroki Ago, Kenta Imamoto, Tetsushi Nishi, Tsuji Masaharu Tsuji, Tatsuya Ikuta, Koji Takahashi, Munetoshi Fukui

研究成果: Contribution to journalArticle査読

9 被引用数 (Scopus)

抄録

Bending of horizontally aligned single-walled carbon nanotubes (SWNTs) was achieved on surface engineered single-crystal sapphire (α-Al 2O3). The SWNTs grown on the r-plane sapphire are aligned along the specific crystallographic [11̄01̄] direction due to the lattice-oriented growth, and we created artificial step structures perpendicular to this SWNT growth direction. These steps changed the nanotube growth direction from the [11̄01̄] to the step direction with the bending angle of nearly 90°. Effects of the bending structure on electron transport property were studied. Our approach to combine the lattice-oriented growth with the step-templated growth will offer a new route toward the growth of two-dimensionally controlled SWNT architectures for future nanoelectronics.

本文言語英語
ページ(範囲)13121-13124
ページ数4
ジャーナルJournal of Physical Chemistry C
113
30
DOI
出版ステータス出版済み - 7 30 2009

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • エネルギー(全般)
  • 物理化学および理論化学
  • 表面、皮膜および薄膜

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