Direct growth of graphene on SiC(0001) by KrF-excimer-laser irradiation

Masakazu Hattori, Hiroshi Ikenoue, Daisuke Nakamura, Kazuaki Furukawa, Makoto Takamura, Hiroki Hibino, Tatsuo Okada

研究成果: ジャーナルへの寄稿学術誌査読

8 被引用数 (Scopus)


In this report, we propose a direct patterning method of graphene on the SiC(0001) surface by KrF-excimer-laser irradiation. In this method, Si atoms are locally sublimated from the SiC surface in the laser-irradiated area, and direct graphene growth is induced by the rearrangement of surplus carbon on the SiC surface. Using Raman microscopy, we demonstrated the formation of graphene by laser irradiation and observed the growth process by transmission electron microscopy and conductive atomic force microscopy. When SiC was irradiated by 5000 shots of the laser beam with a fluence of 1.2 J/cm2, two layers of graphene were synthesized on the SiC(0001) surface. The number of graphene layers increased from 2 to 5-7 with an increase in the number of laser shots. Based on the results of conductive-atomic force microscopy measurements, we conclude that graphene formation was initiated from the step area, after which the graphene grew towards the terrace area by further Si evaporation and C recombination with increasing laser irradiation.

ジャーナルApplied Physics Letters
出版ステータス出版済み - 2月 29 2016

!!!All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)


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