Direct growth of patterned graphene on SiC(0001) surfaces by KrF excimer-laser irradiation

Masakazu Hattori, Kazuaki Furukawa, Makoto Takamura, Hiroki Hibino, Hiroshi Ikenoue

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

1 被引用数 (Scopus)

抄録

A novel method of direct growth of patterned graphene on SiC(0001) surfaces using KrF excimer-laser irradiation is proposed. It relies on the local sublimation of Si atoms within the irradiated area to induce graphene growth through a rearrangement of surplus carbon. Alaser with a wavelength of 248 nm was pulsed with a duration of 55 ns and a repetition rate of 100 Hz that was used to graphene forming. Following laser irradiation of 1.2 J/cm2 (5000 shots) under an Ar atmosphere (500 Pa), characteristic graphene peaks were observed in the Raman spectra of the irradiated area, thereby confirming the formation of graphene. The ratio between the graphene bands in the Raman spectra was used to estimate the grain size at 61.3 nm. Through high-resolution transmission electron microscopy, it was confirmed that two layers of graphene were indeed formed in the laser irradiated region. Using this knowledge, we also demonstrate that line-And-space (L&S) graphene patterns with a pitch of 8 μm can be directly formed using our method.

本文言語英語
ホスト出版物のタイトルLaser-Based Micro- and Nanoprocessing IX
編集者Udo Klotzbach, Kunihiko Washio, Craig B. Arnold
出版社SPIE
ISBN(電子版)9781628414417
DOI
出版ステータス出版済み - 1月 1 2015
イベントLaser-Based Micro- and Nanoprocessing IX - San Francisco, 米国
継続期間: 2月 10 20152月 12 2015

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
9351
ISSN(印刷版)0277-786X
ISSN(電子版)1996-756X

その他

その他Laser-Based Micro- and Nanoprocessing IX
国/地域米国
CitySan Francisco
Period2/10/152/12/15

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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