抄録
Much effort has been devoted to the development of techniques to probe carrier dynamics, which govern many semiconductor device characteristics. We report direct imaging of electron dynamics on semiconductor surfaces by time-resolved photoemission electron microscopy using femtosecond laser pulses. The experiments utilized a variable-repetition-rate femtosecond laser system to suppress sample charging problems. The recombination of photogenerated electrons and the lateral motion of the electrons driven by an external electric field on a GaAs surface were visualized. The mobility was estimated from a linear relationship between the drift velocity and the potential gradient.
本文言語 | 英語 |
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論文番号 | 053117 |
ジャーナル | Applied Physics Letters |
巻 | 104 |
号 | 5 |
DOI | |
出版ステータス | 出版済み - 2月 3 2014 |
外部発表 | はい |
!!!All Science Journal Classification (ASJC) codes
- 物理学および天文学(その他)