Direct observation by X-ray radiography of convection of boric oxide in the GaAs liquid encapsulated czochralski growth

Koichi Kakimoto, Minoru Eguchi, Hisao Watanabe, Taketoshi Hibiya

研究成果: Contribution to journalArticle査読

4 被引用数 (Scopus)

抄録

Convection of molten boric oxide (B2O3) encapsulant during liquid encapsulated Czochralski single crystal growth of GaAs was directly observed by X-ray radiography. The melt flow pattern was monitored using a solid tracer method. The observed flow pattern was axisymmetric, and the flow was steady. The flow of the molten B2O3 was more stable than that of molten silicon. The flow velocity of the molten boric oxide with and without single crystal were about 0.03 and 0.3 mm/s, respectively. Numerical simulation of the molten B2O3 natural convection using commercially available code "FLUENT" was also performed. Three-dimensional calculation was carried out employing observed non-axisymmetric temperature distribution in a crucible holder. The calculated data was able to explain the steady and axisymmetric flow observed even in the non-axisymmetric temperature distribution.

本文言語英語
ページ(範囲)405-411
ページ数7
ジャーナルJournal of Crystal Growth
94
2
DOI
出版ステータス出版済み - 2 1 1989
外部発表はい

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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