Direct observation of the nonradiative recombination processes in InGaN-based LEDs probed by the third-order nonlinear spectroscopy

Koichi Okamoto, S. Saijou, Y. Kawakami, S. Fujita, M. Terazima, G. Shimomiya, T. Mukai

研究成果: ジャーナルへの寄稿Conference article

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Nonradiative dynamics of the carriers and/or excitons created by the photoexcitation in InGaN-based light emitting diodes (LEDs) with blue (460nm, 470nm), green (510nm, 540nm), and amber (600nm) emissions were observed by using the transient grating (TG) method which is one of the third-order nonlinear spectroscopy. The dynamics of carries and/or exciton diffusion and dynamics of heat energy released by the nonradiative recombination were observed by the time profile of the TG signals in picosecond and nanosecond time region, respectively. The diffusion coefficients and the temperature change by the heat generation were detected for several LEDs and potted against the peak wavelengths of emission (In composition in active layers). Those results were compared with the results of the time-resolved photoluminescence (PL) spectroscopy. Dependence of In composition on the radiative and nonradiative recombination lifetimes, the luminescence intensities, the internal quantum efficiencies, the heat generation and conduction processes, and the diffusion coefficients of excitons and/or careers were interpreted by the model in terms of the fluctuation and phase separation of In composition.

元の言語英語
ページ(範囲)150-157
ページ数8
ジャーナルProceedings of SPIE - The International Society for Optical Engineering
4278
DOI
出版物ステータス出版済み - 1 1 2001
イベントLight-Emitting Diodes: Research, Manufacturing, and Applications V - San Jose, CA, 米国
継続期間: 1 24 20011 25 2001

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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