Discharge power dependence of Hα intensity and electron density of Ar + H2 discharges in H-assisted plasma CVD reactor

Jun Umetsu, Kazunori Koga, Kazuhiko Inoue, Hidefumi Matsuzaki, Kosuke Takenaka, Masaharu Shiratani

研究成果: Contribution to journalArticle査読

7 被引用数 (Scopus)

抄録

We have realized anisotropic deposition of Cu, for which Cu is preferentially filled from the bottom of trenches without being deposited on the sidewall of trenches, using H-assisted plasma CVD. To obtain information about a discharge condition to realize a high deposition rate, we have studied dependence of Hα 656.3 nm and Ar 811.5 nm intensities and electron density in the main discharge on the main discharge power, Pm, and in the discharge of H atom source on the discharge power of H atom source, PH, as a parameter of a gas flow rate ratio R = H2/(H2 + Ar). The results suggest that a high electron density in the main discharge and high fluxes of ions and H atoms to a substrate, all of which are needed for deposition of high purity Cu at a high deposition rate, are realized for Pm = 45 W, PH = 500 W, and R = 3.3%.

本文言語英語
ページ(範囲)5659-5662
ページ数4
ジャーナルSurface and Coatings Technology
202
22-23
DOI
出版ステータス出版済み - 8 30 2008

All Science Journal Classification (ASJC) codes

  • 化学 (全般)
  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 材料化学

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