Discussion on hole traps of amorphous films of N, N ′-di(1-naphthyl)- N, N ′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (α- NPD) deposited at different substrate temperatures

研究成果: ジャーナルへの寄稿記事

抄録

The hole current in amorphous films of N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (α-NPD) strongly depends on substrate temperature during vacuum deposition (T sub ) and is the highest at a T sub value of around 275 K. However, the reason for this enhancement of hole current at this T sub is not clearly understood. In this study, we performed thermally stimulated current (TSC) measurements, which is a versatile method used to obtain information about carrier traps, on α-NPD films. The TSC results revealed that hole traps were uniformly distributed throughout the films and that hole traps were the shallowest for films fabricated at a T sub value of around 275 K. Thus, the shallowest hole traps at this T sub are believed to be one reason for the highest hole current for α-NPD films. This is the demonstration of how T sub affects carrier traps, contributing to a better understanding of the underlying physics in organic amorphous films.

元の言語英語
記事番号173301
ジャーナルApplied Physics Letters
114
発行部数17
DOI
出版物ステータス出版済み - 4 29 2019

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diamines
traps
temperature
vacuum deposition
physics
augmentation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

これを引用

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title = "Discussion on hole traps of amorphous films of N, N ′-di(1-naphthyl)- N, N ′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (α- NPD) deposited at different substrate temperatures",
abstract = "The hole current in amorphous films of N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (α-NPD) strongly depends on substrate temperature during vacuum deposition (T sub ) and is the highest at a T sub value of around 275 K. However, the reason for this enhancement of hole current at this T sub is not clearly understood. In this study, we performed thermally stimulated current (TSC) measurements, which is a versatile method used to obtain information about carrier traps, on α-NPD films. The TSC results revealed that hole traps were uniformly distributed throughout the films and that hole traps were the shallowest for films fabricated at a T sub value of around 275 K. Thus, the shallowest hole traps at this T sub are believed to be one reason for the highest hole current for α-NPD films. This is the demonstration of how T sub affects carrier traps, contributing to a better understanding of the underlying physics in organic amorphous films.",
author = "Yu Esaki and Toshinori Matsusima and Chihaya Adachi",
year = "2019",
month = "4",
day = "29",
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language = "English",
volume = "114",
journal = "Applied Physics Letters",
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T1 - Discussion on hole traps of amorphous films of N, N ′-di(1-naphthyl)- N, N ′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (α- NPD) deposited at different substrate temperatures

AU - Esaki, Yu

AU - Matsusima, Toshinori

AU - Adachi, Chihaya

PY - 2019/4/29

Y1 - 2019/4/29

N2 - The hole current in amorphous films of N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (α-NPD) strongly depends on substrate temperature during vacuum deposition (T sub ) and is the highest at a T sub value of around 275 K. However, the reason for this enhancement of hole current at this T sub is not clearly understood. In this study, we performed thermally stimulated current (TSC) measurements, which is a versatile method used to obtain information about carrier traps, on α-NPD films. The TSC results revealed that hole traps were uniformly distributed throughout the films and that hole traps were the shallowest for films fabricated at a T sub value of around 275 K. Thus, the shallowest hole traps at this T sub are believed to be one reason for the highest hole current for α-NPD films. This is the demonstration of how T sub affects carrier traps, contributing to a better understanding of the underlying physics in organic amorphous films.

AB - The hole current in amorphous films of N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (α-NPD) strongly depends on substrate temperature during vacuum deposition (T sub ) and is the highest at a T sub value of around 275 K. However, the reason for this enhancement of hole current at this T sub is not clearly understood. In this study, we performed thermally stimulated current (TSC) measurements, which is a versatile method used to obtain information about carrier traps, on α-NPD films. The TSC results revealed that hole traps were uniformly distributed throughout the films and that hole traps were the shallowest for films fabricated at a T sub value of around 275 K. Thus, the shallowest hole traps at this T sub are believed to be one reason for the highest hole current for α-NPD films. This is the demonstration of how T sub affects carrier traps, contributing to a better understanding of the underlying physics in organic amorphous films.

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