Dislocation behavior in seed-cast grown Si ingots based on crystallographic orientation

Karolin Jiptner, Yoshiji Miyamura, Hirofumi Harada, Bing Gao, Koichi Kakimoto, Takashi Sekiguchi

研究成果: Contribution to journalArticle査読

8 被引用数 (Scopus)

抄録

This study concentrates on dislocation behavior during Si growth by the seed-cast method in different crystallographic orientations. Two methods were combined: (1) Si crystal growth in different seed orientations and (2) float zone Si-annealing experiment to obtain the purely thermal stress-induced dislocation density. The main focus is on the difference between the (111) and the (100) growth directions. It is found that peripheral areas are dominated by thermal stress-induced dislocation densities. Central ingot areas are dominated by other dislocation sources. By comparing the (100) and the (111) orientations, it was found that a difference in dislocation motion exists. This difference is caused by a different activation of slip systems, causing long slip lines in the (111) orientation. It is shown that numerical simulation has problems describing this long-range dislocation slip.

本文言語英語
ページ(範囲)1513-1522
ページ数10
ジャーナルProgress in Photovoltaics: Research and Applications
24
12
DOI
出版ステータス出版済み - 12 1 2016

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 再生可能エネルギー、持続可能性、環境
  • 凝縮系物理学
  • 電子工学および電気工学

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