Dislocation constraint by etch-back process of seed crystal in sic bulk crystal growth

Tomohisa Kato, Naoki Ovanagi, Yasuo Kitou, Shin Ichi Nishizawa, Kazuo Arai

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

1 被引用数 (Scopus)

抄録

Dislocation constraint in the growth of SiC crystal by the modified Lely method was studied. In SiC single crystal growth, the dislocations and defects generally propagate from the seed crystal surface. However, when the etch back on the seed crystal surface in the sublimation process was performed prior to growth, defects and dislocations propagation in the interface between the seed crystal and the grow'n crystal were reasonably suppressed. The switchover from the etch back to the growth could be performed without changing the heating condition during the initial process. We noticed that the density of the hollow defects called as micropipes in the grown crystal were decreased to 1/10 compared to that of the seed crystal used. We consider the etch back proccss of the seed crystal is an effective method for constraining the defects in the SiC crystal growth.

本文言語英語
ホスト出版物のタイトルSilicon Carbide and Related Materials 2001
編集者S. Yoshida, S. Nishino, H. Harima, T. Kimoto
出版社Trans Tech Publications Ltd
ページ111-114
ページ数4
ISBN(印刷版)9780878498949
DOI
出版ステータス出版済み - 1月 1 2002
外部発表はい
イベントInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001 - Tsukuba, 日本
継続期間: 10月 28 200111月 2 2001

出版物シリーズ

名前Materials Science Forum
389-393
ISSN(印刷版)0255-5476
ISSN(電子版)1662-9752

会議

会議International Conference on Silicon Carbide and Related Materials, ICSCRM 2001
国/地域日本
CityTsukuba
Period10/28/0111/2/01

!!!All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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