Dominant Timing Direct Identification for Radiation Noise due to Extended Double Pulse Test on Bare SiC MOSFET and Si RC-IGBT Chips

Engineering

• Power Device 100%
• Pulse Test 66%
• Measurer 33%
• Characteristics 33%
• Losses 33%
• Properties 33%
• Buildings 33%
• Test Method 33%
• Device Structure 33%
• Basic System 33%
• Switching Speed 33%
• Bridge Circuits 33%

Physics

• Electromagnetic Noise 100%
• Field Effect Transistor 66%

Computer Science

• Identification 33%
• Development Stage 33%
• Device Development 33%