Doping effects in InN/GaN short-period quantum well structures - Theoretical studies based on density functional methods

Pawel Strak, Pawel Kempisty, Konrad Sakowski, Stanislaw Krukowski

研究成果: ジャーナルへの寄稿学術誌査読

2 被引用数 (Scopus)

抄録

Density functional theory studies were conducted to determine an influence of the carrier concentration on the optical and electronic properties of InN/GaN superlattice system. The oscillator strength values, energy gaps and the band profiles were obtained. The band profiles were found to be strongly affected for technically possible heavy n-type doping while for p-type doping the carrier influence, both screening and band shift, is negligible. Blue shift of the transition energy between conduction band minima and valence band maxima was observed for high concentrations of both type carriers.

本文言語英語
ページ(範囲)652-656
ページ数5
ジャーナルJournal of Crystal Growth
401
DOI
出版ステータス出版済み - 9月 1 2014
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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