Dose-Dependent Etching Selectivity in SiO2by Focused Ion Beam

Taizoh Sadoh, Hiroomi Eguchi, Atsushi Kenjo, Masanobu Miyao

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

寄稿の翻訳タイトル	Dose-Dependent Etching Selectivity in SiO2by Focused Ion Beam
本文言語	未定義/不明
ページ（範囲）	1855-1858
ページ数	4
ジャーナル	Japanese Journal of Applied Physics, Part 2: Letters
巻	42
号	1
出版ステータス	出版済み - 4月 30 2003

文献へのアクセス

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title = "Dose-Dependent Etching Selectivity in SiO2by Focused Ion Beam",

author = "Taizoh Sadoh and Hiroomi Eguchi and Atsushi Kenjo and Masanobu Miyao",

year = "2003",

month = apr,

day = "30",

language = "未定義/不明",

volume = "42",

pages = "1855--1858",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

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TY - JOUR

T1 - Dose-Dependent Etching Selectivity in SiO2by Focused Ion Beam

AU - Sadoh, Taizoh

AU - Eguchi, Hiroomi

AU - Kenjo, Atsushi

AU - Miyao, Masanobu

PY - 2003/4/30

Y1 - 2003/4/30

M3 - 学術誌

VL - 42

SP - 1855

EP - 1858

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

SN - 0021-4922

IS - 1

ER -