Dose rate dependence of ion-induced-damage in Si evaluated by spectroscopic ellipsometry

Y. Murakami, H. Yamauchi, T. Sadoh, A. Kenjo, M. Miyao

研究成果: ジャーナルへの寄稿Conference article

5 引用 (Scopus)

抜粋

Ion-induced-damage in Si formed by Ar+ at 25 keV was investigated. Ion irradiation was performed at 25-250°C to various doses (2×1013-5×1015 cm-2) with dose rates (3×1011-6×1012 cm-2s-1). The amorphicity of irradiated surface layers was evaluated by using spectroscopic ellipsometry. For samples irradiated at temperatures above 50°C, dose rate dependence of amorphicity was observed. The Arrhenius plot of the defect relaxation rate showed that the activation energy for the defect relaxation was 0.4 eV. The value suggested that the defect relaxation was limited by the migration of the neutral vacancy.

元の言語英語
ページ(範囲)341-344
ページ数4
ジャーナルSolid State Phenomena
78-79
出版物ステータス出版済み - 1 1 2001
イベント6th International Workshop on Beam Injection assesment of Microstructures in Semiconductors (BIAMS 2000) - Fukuoka, 日本
継続期間: 11 12 200011 16 2000

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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