Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO2/GeO2 gate stack

Keisuke Yamamoto, Takahiro Sada, Dong Wang, Hiroshi Nakashima

    研究成果: Contribution to journalArticle査読

    20 被引用数 (Scopus)

    抄録

    Ge p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated using HfGe metal source/drain contacts and an Al/SiO 2/GeO2 gate stack. Following postmetallization annealing at 400 °C, the MOSFET shows peak field-effect mobility (μh) of 336 cm2/Vs. Insertion of a Hf layer between the Al and SiO 2 layers increases the peak μh to 919 cm 2/Vs, which is associated with a positive shift of threshold voltage. We propose a model involving compensation of positive interface trapped and oxide fixed charges by negative oxide fixed charges introduced by Al and Hf in the gate stack. This leads to a decrease in Coulomb scattering, dramatically enhancing mobility.

    本文言語英語
    論文番号122106
    ジャーナルApplied Physics Letters
    103
    12
    DOI
    出版ステータス出版済み - 9 16 2013

    All Science Journal Classification (ASJC) codes

    • 物理学および天文学(その他)

    フィンガープリント

    「Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO<sub>2</sub>/GeO<sub>2</sub> gate stack」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル