Drastic change in electronic domain structures via strong elastic coupling in VO2 films

Takeaki Yajima, Yuma Ninomiya, Tomonori Nishimura, Akira Toriumi

研究成果: Contribution to journalArticle査読

15 被引用数 (Scopus)

抄録

We observed a drastic change in electronic domain structures during the metal-insulator transition (MIT) via strong elastic coupling in single crystalline VO2 films. The domain structure drastically changed from one type to another due to increasing elastic coupling with film thickness. This drastic change was caused by energetic competition between elastic coupling and structural disorder during the MIT, suggesting the microscopic stress engineering facilitate the electronic domain control in functional oxides.

本文言語英語
論文番号205102
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
91
20
DOI
出版ステータス出版済み - 5 6 2015
外部発表はい

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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