We observed a drastic change in electronic domain structures during the metal-insulator transition (MIT) via strong elastic coupling in single crystalline VO2 films. The domain structure drastically changed from one type to another due to increasing elastic coupling with film thickness. This drastic change was caused by energetic competition between elastic coupling and structural disorder during the MIT, suggesting the microscopic stress engineering facilitate the electronic domain control in functional oxides.
|ジャーナル||Physical Review B - Condensed Matter and Materials Physics|
|出版ステータス||出版済み - 5 6 2015|
All Science Journal Classification (ASJC) codes