Drastic change in the GaN film quality by in-situ controlling surface reconstructions in GSMBE

X. Q. Shen, S. Tanaka, S. Iwai, Y. Aoyagi

研究成果: Contribution to journalConference article査読

抄録

GaN growth was perform on 6H-SiC (0001) substrates by gas-source molecular beam epitaxy (GSMBE), using ammonia (NH3) as a nitrogen source. Two kinds of reflection high-energy electron diffraction (RHEED) patterns, named (1×1) and (2×2), were observed during the GaN growth depending on the growth conditions. By careful RHEED study, it was verified that the (1×1) pattern was corresponded to a H2-related nitrogen-rich surface, while (2×2) pattern was resulted from a Ga-rich surface. By x-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) characterizations, it was found that the GaN quality changed drastically grown under different RHEED patterns. GaN film grown under the (1×1) RHEED pattern showed much better qualities than that grown under the (2×2) one.

本文言語英語
ページ(範囲)223-226
ページ数4
ジャーナルMaterials Research Society Symposium - Proceedings
482
DOI
出版ステータス出版済み - 1997
外部発表はい
イベントProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
継続期間: 12 1 199712 4 1997

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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