Dry etching for Germanium waveguides by using CHF3 inductively coupled plasma

Ahmad Syahrin Idris, Haisong Jiang, Kiichi Hamamoto

研究成果: 著書/レポートタイプへの貢献会議での発言

1 引用 (Scopus)

抜粋

Dry etching for Ge waveguide has been researched by using inductively coupled plasma technique with CHFj gas. It realizes a high selectivity of 5:1 against regular photoresist mask. Moreover, anisotropic etching without under-cut has been successfully realized with an etched siclewall angle of 85 degree with an etching rate of 190 nm/min.

元の言語英語
ホスト出版物のタイトルMOC 2015 - Technical Digest of 20th Microoptics Conference
出版者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9784863485433
DOI
出版物ステータス出版済み - 2 23 2016
イベント20th Microoptics Conference, MOC 2015 - Fukuoka, 日本
継続期間: 10 25 201510 28 2015

その他

その他20th Microoptics Conference, MOC 2015
日本
Fukuoka
期間10/25/1510/28/15

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

これを引用

Idris, A. S., Jiang, H., & Hamamoto, K. (2016). Dry etching for Germanium waveguides by using CHF3 inductively coupled plasma. : MOC 2015 - Technical Digest of 20th Microoptics Conference [7416432] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MOC.2015.7416432