Dynamics in rapid-melting growth are analyzed by using Si-segregation phenomena in SiGe-on-insulator (SGOI). To clarify growth-stream and growth-velocity, SiGe profiles in SGOI network and stripe structures are investigated. Based on 2-dimensional Si-concentration mapping for SGOI network, visualization of routes of growth fronts becomes possible. In addition, analysis of Si concentration profiles in SGOI stripes enables evaluation of growth velocity. It is clarified that growth velocity increases by 15 times with increasing growth distance for SGOI stripe with 500 μm length. These techniques are useful to understand detailed kinetics in rapid-melting growth.
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