Dynamic analysis of rapid-melting growth using SiGe on insulator

Ryo Matsumura, Yuki Tojo, Masashi Kurosawa, Taizoh Sadoh, Masanobu Miyao

研究成果: Contribution to journalArticle査読

抄録

Dynamics in rapid-melting growth are analyzed by using Si-segregation phenomena in SiGe-on-insulator (SGOI). To clarify growth-stream and growth-velocity, SiGe profiles in SGOI network and stripe structures are investigated. Based on 2-dimensional Si-concentration mapping for SGOI network, visualization of routes of growth fronts becomes possible. In addition, analysis of Si concentration profiles in SGOI stripes enables evaluation of growth velocity. It is clarified that growth velocity increases by 15 times with increasing growth distance for SGOI stripe with 500 μm length. These techniques are useful to understand detailed kinetics in rapid-melting growth.

本文言語英語
ページ(範囲)125-128
ページ数4
ジャーナルThin Solid Films
557
DOI
出版ステータス出版済み - 4 30 2014

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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