Dynamic Avalanche Free Design in 1.2kV Si-IGBTs for Ultra High Current Density Operation

Peng Luo, Sankara Narayanan Ekkanath Madathil, Shin Ichi Nishizawa, Wataru Saito

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

7 被引用数 (Scopus)

抄録

Dynamic Avalanche (DA) phenomenon poses a fundamental limit on the operating current density, turn-off power loss as well as reliability of MOS-bipolar devices. Overcoming this phenomenon is essential to ensure their safe operation in emerging electric transport. In this work, detailed analysis of 1.2 kV trench gated IGBTs are undertaken through experiments and calibrated TCAD simulations to show the fundamental cause of the DA as well as a method to achieve DA free design for ultra-high current density operation and reliability in 1.2 kV Si-IGBTs.

本文言語英語
ホスト出版物のタイトル2019 IEEE International Electron Devices Meeting, IEDM 2019
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781728140315
DOI
出版ステータス出版済み - 12 2019
イベント65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, 米国
継続期間: 12 7 201912 11 2019

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
2019-December
ISSN(印刷版)0163-1918

会議

会議65th Annual IEEE International Electron Devices Meeting, IEDM 2019
国/地域米国
CitySan Francisco
Period12/7/1912/11/19

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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