Dynamic Avalanche Free Super Junction-TCIGBT for High Power Density Operation

Peng Luo, Sankara Narayanan Ekkanath Madathil, Shin Ichi Nishizawa, Wataru Saito

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

Dynamic Avalanche (DA) effects in the Super-Junction Trench IGBTs are analyzed through 3-D TCAD simulations for the first time. A DA free solution for high power density and low loss is proposed and demonstrated in detail. Furthermore, simulation results show that DA results in significant increase in turn-off losses in the Super-Junction Trench IGBTs at high current density operations, which poses a fundamental limit on the power density of IGBT applications. In contrast, the Super-Junction Trench Clustered IGBTs remain DA free at high current density and show low switching losses due to enhanced PMOS action. Therefore, the Super-Junction Trench IGBTs are well suitable for high power density operations with a potential to operate beyond the 1-D unipolar 4H-SiC limit.

本文言語英語
ホスト出版物のタイトルProceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020
出版社Institute of Electrical and Electronics Engineers Inc.
ページ470-473
ページ数4
ISBN(電子版)9781728148366
DOI
出版ステータス出版済み - 9 2020
イベント32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020 - Virtual, Online, オーストリア
継続期間: 9 13 20209 18 2020

出版物シリーズ

名前Proceedings of the International Symposium on Power Semiconductor Devices and ICs
2020-September
ISSN(印刷版)1063-6854

会議

会議32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020
Countryオーストリア
CityVirtual, Online
Period9/13/209/18/20

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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