TY - GEN
T1 - Dynamic Avalanche Free Super Junction-TCIGBT for High Power Density Operation
AU - Luo, Peng
AU - Madathil, Sankara Narayanan Ekkanath
AU - Nishizawa, Shin Ichi
AU - Saito, Wataru
PY - 2020/9
Y1 - 2020/9
N2 - Dynamic Avalanche (DA) effects in the Super-Junction Trench IGBTs are analyzed through 3-D TCAD simulations for the first time. A DA free solution for high power density and low loss is proposed and demonstrated in detail. Furthermore, simulation results show that DA results in significant increase in turn-off losses in the Super-Junction Trench IGBTs at high current density operations, which poses a fundamental limit on the power density of IGBT applications. In contrast, the Super-Junction Trench Clustered IGBTs remain DA free at high current density and show low switching losses due to enhanced PMOS action. Therefore, the Super-Junction Trench IGBTs are well suitable for high power density operations with a potential to operate beyond the 1-D unipolar 4H-SiC limit.
AB - Dynamic Avalanche (DA) effects in the Super-Junction Trench IGBTs are analyzed through 3-D TCAD simulations for the first time. A DA free solution for high power density and low loss is proposed and demonstrated in detail. Furthermore, simulation results show that DA results in significant increase in turn-off losses in the Super-Junction Trench IGBTs at high current density operations, which poses a fundamental limit on the power density of IGBT applications. In contrast, the Super-Junction Trench Clustered IGBTs remain DA free at high current density and show low switching losses due to enhanced PMOS action. Therefore, the Super-Junction Trench IGBTs are well suitable for high power density operations with a potential to operate beyond the 1-D unipolar 4H-SiC limit.
UR - http://www.scopus.com/inward/record.url?scp=85090560710&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85090560710&partnerID=8YFLogxK
U2 - 10.1109/ISPSD46842.2020.9170129
DO - 10.1109/ISPSD46842.2020.9170129
M3 - Conference contribution
AN - SCOPUS:85090560710
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 470
EP - 473
BT - Proceedings of the 2020 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2020
Y2 - 13 September 2020 through 18 September 2020
ER -