Dynamical diffraction effects on higher-order laue zone lines in CBED patterns of semiconductors

T. Okuyama, Syo Matsumura, N. Kuwano, K. Oki, Y. Tomokiyo

研究成果: ジャーナルへの寄稿記事

12 引用 (Scopus)

抄録

We studied the dynamical diffraction effects on the defect lines of higher-order Laue zone reflections (HOLZ lines) in bright field disks of convergent-beam electron diffraction (CBED). The positions of the HOLZ lines were confirmed experimentally to deviate by a small amount from the positions expected from the kinematical approximation. The amount of line shift is represented by the corresponding deviation of the accelerating voltage Δ E. In the case of [111] incidence, one HOLZ reflection can generate two lines with negative and positive values of Δ E. Calculations based on the dynamical diffraction theory clarified that the HOLZ lines with negative and positive Δ E arise from the first and second branches of the zeroth-layer dispersion surface, respectively. Either, or occasionally both, of the lines is observed in the HOLZ pattern, depending upon which branch is dominantly excited. The dependency of Δ E on the material species and thickness of specimen and on the zone axis is discussed in detail for Si, Ge and some III-V compound semiconductors.

元の言語英語
ページ(範囲)309-317
ページ数9
ジャーナルUltramicroscopy
31
発行部数3
DOI
出版物ステータス出版済み - 1 1 1989

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Electron diffraction
Diffraction patterns
diffraction patterns
electron diffraction
Diffraction
Semiconductor materials
diffraction
incidence
deviation
Defects
shift
defects
Electric potential
electric potential
approximation
III-V semiconductors

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Instrumentation

これを引用

Dynamical diffraction effects on higher-order laue zone lines in CBED patterns of semiconductors. / Okuyama, T.; Matsumura, Syo; Kuwano, N.; Oki, K.; Tomokiyo, Y.

:: Ultramicroscopy, 巻 31, 番号 3, 01.01.1989, p. 309-317.

研究成果: ジャーナルへの寄稿記事

Okuyama, T. ; Matsumura, Syo ; Kuwano, N. ; Oki, K. ; Tomokiyo, Y. / Dynamical diffraction effects on higher-order laue zone lines in CBED patterns of semiconductors. :: Ultramicroscopy. 1989 ; 巻 31, 番号 3. pp. 309-317.
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abstract = "We studied the dynamical diffraction effects on the defect lines of higher-order Laue zone reflections (HOLZ lines) in bright field disks of convergent-beam electron diffraction (CBED). The positions of the HOLZ lines were confirmed experimentally to deviate by a small amount from the positions expected from the kinematical approximation. The amount of line shift is represented by the corresponding deviation of the accelerating voltage Δ E. In the case of [111] incidence, one HOLZ reflection can generate two lines with negative and positive values of Δ E. Calculations based on the dynamical diffraction theory clarified that the HOLZ lines with negative and positive Δ E arise from the first and second branches of the zeroth-layer dispersion surface, respectively. Either, or occasionally both, of the lines is observed in the HOLZ pattern, depending upon which branch is dominantly excited. The dependency of Δ E on the material species and thickness of specimen and on the zone axis is discussed in detail for Si, Ge and some III-V compound semiconductors.",
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AU - Tomokiyo, Y.

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N2 - We studied the dynamical diffraction effects on the defect lines of higher-order Laue zone reflections (HOLZ lines) in bright field disks of convergent-beam electron diffraction (CBED). The positions of the HOLZ lines were confirmed experimentally to deviate by a small amount from the positions expected from the kinematical approximation. The amount of line shift is represented by the corresponding deviation of the accelerating voltage Δ E. In the case of [111] incidence, one HOLZ reflection can generate two lines with negative and positive values of Δ E. Calculations based on the dynamical diffraction theory clarified that the HOLZ lines with negative and positive Δ E arise from the first and second branches of the zeroth-layer dispersion surface, respectively. Either, or occasionally both, of the lines is observed in the HOLZ pattern, depending upon which branch is dominantly excited. The dependency of Δ E on the material species and thickness of specimen and on the zone axis is discussed in detail for Si, Ge and some III-V compound semiconductors.

AB - We studied the dynamical diffraction effects on the defect lines of higher-order Laue zone reflections (HOLZ lines) in bright field disks of convergent-beam electron diffraction (CBED). The positions of the HOLZ lines were confirmed experimentally to deviate by a small amount from the positions expected from the kinematical approximation. The amount of line shift is represented by the corresponding deviation of the accelerating voltage Δ E. In the case of [111] incidence, one HOLZ reflection can generate two lines with negative and positive values of Δ E. Calculations based on the dynamical diffraction theory clarified that the HOLZ lines with negative and positive Δ E arise from the first and second branches of the zeroth-layer dispersion surface, respectively. Either, or occasionally both, of the lines is observed in the HOLZ pattern, depending upon which branch is dominantly excited. The dependency of Δ E on the material species and thickness of specimen and on the zone axis is discussed in detail for Si, Ge and some III-V compound semiconductors.

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