Dynamical Monte Carlo simulation of L11(CuPt)-type ordering during (001) epitaxial growth of III-V semiconductor alloys

S. Matsumura, K. Takano, N. Kuwano, K. Oki

研究成果: ジャーナルへの寄稿記事

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In this study, we have carried out Monte Carlo simulation of L11(CuPt)-type ordering in II-V semiconductor alloys of A0.5B0.5C during the (001) epitaxial growth, on the basis of an Ising-like model for the layer-by-layer stacking including surface migration of atoms. Fourier power spectra of the atom configurations thus obtained exhibit diffuse streaks running along the growth direction through peaks at 1 2 1 2 1 2 positions indicative of the L11-type ordering. An additional tendency for first nearest neighboring atoms toward clustering gives rise to wavy modulation of the streaks such as observed in electron diffraction patterns of epitaxial layers of Ga0.5In0.5P or GaAs0.5Sb0.5. The result suggests that the epitaxial growth develops L11 ordered domains with numerous stacking faults and small like-atom clusters simultaneously within the epilayers.

元の言語英語
ページ(範囲)194-198
ページ数5
ジャーナルJournal of Crystal Growth
115
発行部数1-4
DOI
出版物ステータス出版済み - 12 2 1991

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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