Dynamical motion of a guest ion studied by Raman scattering and the lattice thermal conductivity in A8Ga16Si30-xGe x (A = Ba, Sr)

Y. Takasu, T. Hasegawa, N. Ogita, M. Udagawa, K. Suekuni, M. A. Avila, T. Takabatake

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

抄録

Dynamical motions of a guest ion in type-I clathrate compounds have been investigated using Raman scattering. It has been found that the 4th order anharmonic potential is important for the guest ion motion not only for A 8Ga16Ge30 (A=Ba, Sr, Eu), but also for A 8Ga16Si30-xGex (A = Ba, Sr). The substitution of Ge expands isotropically the cage at 6d-site for Ba 8Ga16Si30-xGex, however, anisotropically for Sr8Ga16Si30-xGe x. Especially, for Sr8Ga16Si 30-xGex, the off-center rattling develops with increasing Ge concentration and plays an important role to the suppression of the lattice thermal conductivity.

本文言語英語
ホスト出版物のタイトルProceedings ICT'07 - 26th International Conference on Thermoelectrics
ページ223-225
ページ数3
DOI
出版ステータス出版済み - 2007
外部発表はい
イベントICT'07 - 26th International Conference on Thermoelectrics - Jeju, 韓国
継続期間: 6月 3 20076月 7 2007

出版物シリーズ

名前International Conference on Thermoelectrics, ICT, Proceedings

その他

その他ICT'07 - 26th International Conference on Thermoelectrics
国/地域韓国
CityJeju
Period6/3/076/7/07

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)

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