Dynamics of photo-excitation for the ablation of 4H-SiC substrate using femtosecond laser

Keigo Matsunaga, Terutake Hayashi, Syuhei Kurokawa, Hideaki Yokoo, Noboru Hasegawa, Masaharu Nishikino, Yoji Matsukawa

研究成果: 会議への寄与タイプ論文

抄録

The authors suggest a low fluence laser processing method for a power semiconductor wafer using a femtosecond double-pulse beam. In this report, we investigate the temporal variation of the surface reflectivity after the ultrafast laser irradiation as a result of a surface photo-excitation. In the double pulse processing method, the surface reflectivity is constantly high until 5 ps after the first pulse irradiation and then gradually decreased with increasing the time interval to shot the second pulse. In addition, the laser induced damage on SiC target is observed at a bottom of the ablated crater by using scanning transmission electron microscope (STEM). The thin amorphous layer whose thickness is about 10 nm can be observed at the ablated area.

元の言語英語
出版物ステータス出版済み - 11 13 2017
イベント9th International Conference on Leading Edge Manufacturing in 21st Century, LEM 2017 - Hiroshima City, 日本
継続期間: 11 13 201711 17 2017

その他

その他9th International Conference on Leading Edge Manufacturing in 21st Century, LEM 2017
日本
Hiroshima City
期間11/13/1711/17/17

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Photoexcitation
Ablation
Ultrashort pulses
Substrates
Ultrafast lasers
Laser damage
Laser beam effects
Processing
Electron microscopes
Irradiation
Semiconductor materials
Scanning
Lasers

All Science Journal Classification (ASJC) codes

  • Industrial and Manufacturing Engineering

これを引用

Matsunaga, K., Hayashi, T., Kurokawa, S., Yokoo, H., Hasegawa, N., Nishikino, M., & Matsukawa, Y. (2017). Dynamics of photo-excitation for the ablation of 4H-SiC substrate using femtosecond laser. 論文発表場所 9th International Conference on Leading Edge Manufacturing in 21st Century, LEM 2017, Hiroshima City, 日本.

Dynamics of photo-excitation for the ablation of 4H-SiC substrate using femtosecond laser. / Matsunaga, Keigo; Hayashi, Terutake; Kurokawa, Syuhei; Yokoo, Hideaki; Hasegawa, Noboru; Nishikino, Masaharu; Matsukawa, Yoji.

2017. 論文発表場所 9th International Conference on Leading Edge Manufacturing in 21st Century, LEM 2017, Hiroshima City, 日本.

研究成果: 会議への寄与タイプ論文

Matsunaga, K, Hayashi, T, Kurokawa, S, Yokoo, H, Hasegawa, N, Nishikino, M & Matsukawa, Y 2017, 'Dynamics of photo-excitation for the ablation of 4H-SiC substrate using femtosecond laser' 論文発表場所 9th International Conference on Leading Edge Manufacturing in 21st Century, LEM 2017, Hiroshima City, 日本, 11/13/17 - 11/17/17, .
Matsunaga K, Hayashi T, Kurokawa S, Yokoo H, Hasegawa N, Nishikino M その他. Dynamics of photo-excitation for the ablation of 4H-SiC substrate using femtosecond laser. 2017. 論文発表場所 9th International Conference on Leading Edge Manufacturing in 21st Century, LEM 2017, Hiroshima City, 日本.
Matsunaga, Keigo ; Hayashi, Terutake ; Kurokawa, Syuhei ; Yokoo, Hideaki ; Hasegawa, Noboru ; Nishikino, Masaharu ; Matsukawa, Yoji. / Dynamics of photo-excitation for the ablation of 4H-SiC substrate using femtosecond laser. 論文発表場所 9th International Conference on Leading Edge Manufacturing in 21st Century, LEM 2017, Hiroshima City, 日本.
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AU - Matsunaga, Keigo

AU - Hayashi, Terutake

AU - Kurokawa, Syuhei

AU - Yokoo, Hideaki

AU - Hasegawa, Noboru

AU - Nishikino, Masaharu

AU - Matsukawa, Yoji

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AB - The authors suggest a low fluence laser processing method for a power semiconductor wafer using a femtosecond double-pulse beam. In this report, we investigate the temporal variation of the surface reflectivity after the ultrafast laser irradiation as a result of a surface photo-excitation. In the double pulse processing method, the surface reflectivity is constantly high until 5 ps after the first pulse irradiation and then gradually decreased with increasing the time interval to shot the second pulse. In addition, the laser induced damage on SiC target is observed at a bottom of the ablated crater by using scanning transmission electron microscope (STEM). The thin amorphous layer whose thickness is about 10 nm can be observed at the ablated area.

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