Easy release of mold in imprint lithography using ion-beam-irradiated photoresist surface

Akiyoshi Baba, Masakazu Iwamoto, Kouichi Tsubaki, Tanemasa Asano

研究成果: Contribution to journalArticle査読

1 被引用数 (Scopus)

抄録

We demonstrate the successful release of a mold from an ion-beam-irradiated photoresist film without pattern destruction in nano-imprint lithography. A stripe-patterned V-shaped groove was used as a mold for the imprinting. The photoresist containing mainly novolac resin was used. The surface of the photoresist was modified by irradiating it with 100 keV argon ions with varying ion doses. It is found that the success rate of release increases with the increase of ion dose without any deformation of the transferred structure. It is also found that the modification of the photoresist surface can shorten the imprinting time. These improvements of the release and imprinting characteristics are caused by the existence of a stiffened layer at the photoresist surface produced by the ion-beam irradiation. We also demonstrate step-and-repeat imprinting using this technique.

本文言語英語
ページ(範囲)4190-4193
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
41
6 B
DOI
出版ステータス出版済み - 6 2002

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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