@article{410970d7fbbc4bf1915177337ea31c27,
title = "Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond",
abstract = "A nitridation process of a diamond surface with nitrogen radical exposure far from the radio-frequency plasma for the stabilization of a negatively charged nitrogen-vacancy (NV%) centers near the surface is presented. At a nitrogen coverage of as high as 0.9 monolayers, high average Rabi contrasts of 0.40 + 0.06 and 0.46 + 0.03 have been obtained for single NV% centers formed by shallow nitrogen implantation with acceleration voltages of 1 and 2 keV, respectively. This indicates that nitrogen termination by a radical exposure process produces an electric charge state suitable for single NV% centers near the surface compared with the states obtained for alternatively terminated surfaces.",
author = "Taisuke Kageura and Kanami Kato and Hayate Yamano and Evi Suaebah and Miki Kajiya and Sora Kawai and Masafumi Inaba and Takashi Tanii and Moriyoshi Haruyama and Keisuke Yamada and Shinobu Onoda and Wataru Kada and Osamu Hanaizumi and Tokuyuki Teraji and Junichi Isoya and Shozo Kono and Hiroshi Kawarada",
note = "Funding Information: This work was supported by a Grant-in-Aid for Scientific Research (S) (Grant Number 26220903), Grant-in-Aid for Scientific Research (A) (Grant Number 26246001), and Grant-in-Aid for Scientific Research (B) (Grant Number 15H03980) from the Japan Society for the Promotion of Science (JSPS). We thank Dr. Liam P. McGuinness and Professor Fedor Jelezko for their help with setting up the CFM. Publisher Copyright: {\textcopyright} 2017 The Japan Society of Applied Physics.",
year = "2017",
month = may,
doi = "10.7567/APEX.10.055503",
language = "English",
volume = "10",
journal = "Applied Physics Express",
issn = "1882-0778",
publisher = "Japan Society of Applied Physics",
number = "5",
}