Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond

Taisuke Kageura, Kanami Kato, Hayate Yamano, Evi Suaebah, Miki Kajiya, Sora Kawai, Masafumi Inaba, Takashi Tanii, Moriyoshi Haruyama, Keisuke Yamada, Shinobu Onoda, Wataru Kada, Osamu Hanaizumi, Tokuyuki Teraji, Junichi Isoya, Shozo Kono, Hiroshi Kawarada

研究成果: ジャーナルへの寄稿記事

10 引用 (Scopus)

抄録

A nitridation process of a diamond surface with nitrogen radical exposure far from the radio-frequency plasma for the stabilization of a negatively charged nitrogen-vacancy (NV%) centers near the surface is presented. At a nitrogen coverage of as high as 0.9 monolayers, high average Rabi contrasts of 0.40 + 0.06 and 0.46 + 0.03 have been obtained for single NV% centers formed by shallow nitrogen implantation with acceleration voltages of 1 and 2 keV, respectively. This indicates that nitrogen termination by a radical exposure process produces an electric charge state suitable for single NV% centers near the surface compared with the states obtained for alternatively terminated surfaces.

元の言語英語
記事番号055503
ジャーナルApplied Physics Express
10
発行部数5
DOI
出版物ステータス出版済み - 5 2017

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Nitridation
Vacancies
Diamonds
diamonds
Nitrogen
nitrogen
Electric charge
electric charge
Monolayers
implantation
radio frequencies
Stabilization
stabilization
Plasmas
Electric potential
electric potential

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond. / Kageura, Taisuke; Kato, Kanami; Yamano, Hayate; Suaebah, Evi; Kajiya, Miki; Kawai, Sora; Inaba, Masafumi; Tanii, Takashi; Haruyama, Moriyoshi; Yamada, Keisuke; Onoda, Shinobu; Kada, Wataru; Hanaizumi, Osamu; Teraji, Tokuyuki; Isoya, Junichi; Kono, Shozo; Kawarada, Hiroshi.

:: Applied Physics Express, 巻 10, 番号 5, 055503, 05.2017.

研究成果: ジャーナルへの寄稿記事

Kageura, T, Kato, K, Yamano, H, Suaebah, E, Kajiya, M, Kawai, S, Inaba, M, Tanii, T, Haruyama, M, Yamada, K, Onoda, S, Kada, W, Hanaizumi, O, Teraji, T, Isoya, J, Kono, S & Kawarada, H 2017, 'Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond', Applied Physics Express, 巻. 10, 番号 5, 055503. https://doi.org/10.7567/APEX.10.055503
Kageura, Taisuke ; Kato, Kanami ; Yamano, Hayate ; Suaebah, Evi ; Kajiya, Miki ; Kawai, Sora ; Inaba, Masafumi ; Tanii, Takashi ; Haruyama, Moriyoshi ; Yamada, Keisuke ; Onoda, Shinobu ; Kada, Wataru ; Hanaizumi, Osamu ; Teraji, Tokuyuki ; Isoya, Junichi ; Kono, Shozo ; Kawarada, Hiroshi. / Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond. :: Applied Physics Express. 2017 ; 巻 10, 番号 5.
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abstract = "A nitridation process of a diamond surface with nitrogen radical exposure far from the radio-frequency plasma for the stabilization of a negatively charged nitrogen-vacancy (NV{\%}) centers near the surface is presented. At a nitrogen coverage of as high as 0.9 monolayers, high average Rabi contrasts of 0.40 + 0.06 and 0.46 + 0.03 have been obtained for single NV{\%} centers formed by shallow nitrogen implantation with acceleration voltages of 1 and 2 keV, respectively. This indicates that nitrogen termination by a radical exposure process produces an electric charge state suitable for single NV{\%} centers near the surface compared with the states obtained for alternatively terminated surfaces.",
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AU - Kageura, Taisuke

AU - Kato, Kanami

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AU - Suaebah, Evi

AU - Kajiya, Miki

AU - Kawai, Sora

AU - Inaba, Masafumi

AU - Tanii, Takashi

AU - Haruyama, Moriyoshi

AU - Yamada, Keisuke

AU - Onoda, Shinobu

AU - Kada, Wataru

AU - Hanaizumi, Osamu

AU - Teraji, Tokuyuki

AU - Isoya, Junichi

AU - Kono, Shozo

AU - Kawarada, Hiroshi

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