Effect of Al2O3 deposition and subsequent annealing on passivation of defects in Ge-rich SiGe-on-insulator

Haigui Yang, Masatoshi Iyota, Shogo Ikeura, Dong Wang, Hiroshi Nakashima

研究成果: 著書/レポートタイプへの貢献会議での発言

抄録

Al2O3 deposition and subsequent post-deposition annealing (Al2O3-PDA) is proposed as an effective method to passivate electrically active defects in Ge-rich SiGe-on-insulator (SGOI) substrates. We found that Al2O3-PDA could not only suppress the surface reaction during Al-PDA, but could also effectively reduce the defect-induced acceptor and hole concentration in Ge-rich SGOI. Al 2O3-PDA greatly improves the electrical characteristics of a back-gate metal-oxide-semiconductor field-effect transistor fabricated on Ge-rich SGOI.

元の言語英語
ホスト出版物のタイトルTechnology Evolution for Silicon Nano-Electronics
ページ79-84
ページ数6
DOI
出版物ステータス出版済み - 3 23 2011
イベントInternational Symposium on Technology Evolution for Silicon Nano-Electronics 2010, ISTESNE - Tokyo, 日本
継続期間: 6 3 20106 5 2010

出版物シリーズ

名前Key Engineering Materials
470
ISSN(印刷物)1013-9826

その他

その他International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, ISTESNE
日本
Tokyo
期間6/3/106/5/10

Fingerprint

Passivation
Annealing
Defects
Personal digital assistants
Hole concentration
Surface reactions
MOSFET devices
Substrates

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Yang, H., Iyota, M., Ikeura, S., Wang, D., & Nakashima, H. (2011). Effect of Al2O3 deposition and subsequent annealing on passivation of defects in Ge-rich SiGe-on-insulator. : Technology Evolution for Silicon Nano-Electronics (pp. 79-84). (Key Engineering Materials; 巻数 470). https://doi.org/10.4028/www.scientific.net/KEM.470.79

Effect of Al2O3 deposition and subsequent annealing on passivation of defects in Ge-rich SiGe-on-insulator. / Yang, Haigui; Iyota, Masatoshi; Ikeura, Shogo; Wang, Dong; Nakashima, Hiroshi.

Technology Evolution for Silicon Nano-Electronics. 2011. p. 79-84 (Key Engineering Materials; 巻 470).

研究成果: 著書/レポートタイプへの貢献会議での発言

Yang, H, Iyota, M, Ikeura, S, Wang, D & Nakashima, H 2011, Effect of Al2O3 deposition and subsequent annealing on passivation of defects in Ge-rich SiGe-on-insulator. : Technology Evolution for Silicon Nano-Electronics. Key Engineering Materials, 巻. 470, pp. 79-84, International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, ISTESNE, Tokyo, 日本, 6/3/10. https://doi.org/10.4028/www.scientific.net/KEM.470.79
Yang H, Iyota M, Ikeura S, Wang D, Nakashima H. Effect of Al2O3 deposition and subsequent annealing on passivation of defects in Ge-rich SiGe-on-insulator. : Technology Evolution for Silicon Nano-Electronics. 2011. p. 79-84. (Key Engineering Materials). https://doi.org/10.4028/www.scientific.net/KEM.470.79
Yang, Haigui ; Iyota, Masatoshi ; Ikeura, Shogo ; Wang, Dong ; Nakashima, Hiroshi. / Effect of Al2O3 deposition and subsequent annealing on passivation of defects in Ge-rich SiGe-on-insulator. Technology Evolution for Silicon Nano-Electronics. 2011. pp. 79-84 (Key Engineering Materials).
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