Heat treatment was performed on β-SiC with different sintering additives in the temperature range 1873-2073 K, in both argon and nitrogen-gas atmospheres. In the case of the specimens heat-treated at 2073 K in argon, the weight loss was more than the total weight of the sintering additives, except for B,C-doped β-SiC. On the other hand, weight loss was suppressed by about one-third to one-half in nitrogen gas. Weight loss depended mainly on the reaction at the interface between the SiC grains and the grain-boundary phase.
|ジャーナル||Journal of the American Ceramic Society|
|出版ステータス||出版済み - 2000|
All Science Journal Classification (ASJC) codes