Effect of buffer layer on epitaxial growth of YSZ deposited on Si substrate by slower Q-switched 266 nm YAG laser

Satoru Kaneko, Kensuke Akiyama, Yoshitada Shimizu, Takeshi Ito, Shinji Yasaka, Masahiko Mitsuhashi, Seishiro Ohya, Keisuke Saito, Takayuki Watanabe, Shoji Okamoto, Hiroshi Funakubo

研究成果: Contribution to journalArticle査読

14 被引用数 (Scopus)

抄録

Yttria-stabilized zirconia (YSZ) was grown on Si(100) substrate by pulsed laser deposition (PLD). The laser used in this study was a 266 nm YAG laser with a second function generator modulating only the Q-switch while the primary generator modulated the flash lamp (slower Q-switch). Epitaxial growth was verified on YSZ film deposited without oxygen gas followed by primary deposition in oxygen atmosphere on Si substrate with a ∼0.4-nm-thin oxide layer. The crystallinity was strongly dependent on the thickness of the buffer layer deposited prior to the primary deposition of YSZ. The epitaxial growth was confirmed by φ scan, and ω scan (rocking curve) showed the full width at half maximum (FWHM) of 1.1 deg. The required oxygen pressure for epitaxial growth was quite high compared to that of excimer deposition.

本文言語英語
ページ(範囲)1532-1535
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
43
4 A
DOI
出版ステータス出版済み - 4 2004
外部発表はい

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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