Yttria-stabilized zirconia (YSZ) was grown on Si(100) substrate by pulsed laser deposition (PLD). The laser used in this study was a 266 nm YAG laser with a second function generator modulating only the Q-switch while the primary generator modulated the flash lamp (slower Q-switch). Epitaxial growth was verified on YSZ film deposited without oxygen gas followed by primary deposition in oxygen atmosphere on Si substrate with a ∼0.4-nm-thin oxide layer. The crystallinity was strongly dependent on the thickness of the buffer layer deposited prior to the primary deposition of YSZ. The epitaxial growth was confirmed by φ scan, and ω scan (rocking curve) showed the full width at half maximum (FWHM) of 1.1 deg. The required oxygen pressure for epitaxial growth was quite high compared to that of excimer deposition.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||出版済み - 4 2004|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)