Effect of centrifugal etching in micro-fabricated CuFeTe₂ thin films for Oxygen Sensor Devices

New types of oxygen sensor that can operate at room temperature using the intercalation of oxygen molecules for the layered compounds CuFeTe₂ have been developed. In our previous experiment, response time for oxygen partial pressure was improved by using wet etching and photolithography for forming many fine holes on the surface of single-crystal CuFeTe₂ thin films. However, the resistance change was small in an oxygen gas response because sufficient etching depth was not obtained. In this study, we report application of deep etching onto CuFeTe₂ single crystal using of centrifugal etching in order to improve the aspect ratio and the etching depth.