Effect of crystallinity on residual strain distribution in cast-grown Si

Karolin Jiptner, Masayuki Fukuzawa, Yoshiji Miyamura, Hirofumi Harada, Takashi Sekiguchi

研究成果: Contribution to journalArticle査読

12 被引用数 (Scopus)

抄録

We report the correlation between the crystallinity of ingots grown by the directional solidification technique and the residual strain and dislocation distribution. It was found that mono-like ingots have a 20-25% higher averaged residual strain than multicrystalline Si ingots grown under the same conditions. However the existence of local high-strained areas, which were frequently found in multicrystalline Si ingots, is reduced in mono-like Si ingots. In addition, a reduction in dislocation density was observed. This effect and the decrease in local high strain could be attributed to the decrease in grain boundaries in the mono-like ingots.

本文言語英語
論文番号065501
ジャーナルJapanese journal of applied physics
52
6 PART 1
DOI
出版ステータス出版済み - 6 2013
外部発表はい

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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