Contribution of recoil atoms to the spatial distribution of total energy deposited by ions impinging in silicon is evaluated for 10-250 keV B and Ar ions. The calculated results are compared with the damaged layer thickness obtained by the ion-bombardment-enhanced selective etching, and the effect of energy transport with recoil atoms (recoil atom effect) on deposited energy distributions is discussed.
|ジャーナル||Research Reports on Information Science and Electrical Engineering of Kyushu University|
|出版物ステータス||出版済み - 9 1 1997|
All Science Journal Classification (ASJC) codes
- Computer Science(all)
- Electrical and Electronic Engineering