Effect of energy transport with recoil atoms on deposited energy distribution in silicon irradiated with energetic ions

Dong Ju Bai, Akiyoshi Baba, Atsushi Kenjo, Taizoh Sadoh, Hiroshi Nakashima, Hiroshi Mori, Toshio Tsurushima

研究成果: Contribution to journalArticle査読

抄録

Contribution of recoil atoms to the spatial distribution of total energy deposited by ions impinging in silicon is evaluated for 10-250 keV B and Ar ions. The calculated results are compared with the damaged layer thickness obtained by the ion-bombardment-enhanced selective etching, and the effect of energy transport with recoil atoms (recoil atom effect) on deposited energy distributions is discussed.

本文言語英語
ページ(範囲)219-223
ページ数5
ジャーナルResearch Reports on Information Science and Electrical Engineering of Kyushu University
2
2
出版ステータス出版済み - 9 1 1997

All Science Journal Classification (ASJC) codes

  • コンピュータ サイエンス(全般)
  • 電子工学および電気工学

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